« назад
WESTERN DIGITAL Ultrastar SN630 SSD 6400GB 6.4cm 2.5inch 7.0MM PCIe TLC WUS3CA164C7P3E3
(0 коментара)
| SCU: | 0TS1640 |
| Weight: | 95 g |
| Form Factor: | 2.5" |
| Interface: | U.2 PCIe 3.1 x4 (NVMe) |
| Features: | Instant Secure Erase (ISE), 64-layer 3D BiCS FLASH, NVM Express (NVMe) 1.3 |
| NAND Flash Memory Type: | 3D triple-level cell (TLC) |
| Capacity: | 6400 GB |
- Изчерпан
|
0.00 лв без ДДС
0.00 лв с ДДС
Цена за доставка: 4.99 лв с ДДС
Безплатна доставка при поръчка над 99 лв с ДДС
сравни
добави в любими
Изчерпан
Цена за доставка: 4.99 лв с ДДС
Безплатна доставка при поръчка над 99 лв с ДДС
| Weight: | 95 g |
| Form Factor: | 2.5" |
| Interface: | U.2 PCIe 3.1 x4 (NVMe) |
| Features: | Instant Secure Erase (ISE), 64-layer 3D BiCS FLASH, NVM Express (NVMe) 1.3 |
| NAND Flash Memory Type: | 3D triple-level cell (TLC) |
| Capacity: | 6400 GB |
| Encryption Algorithm: | 256-bit AES |
| Device Type: | Solid state drive - internal |
| Manufacturer: | HGST |
| Manufacturer Part No: | 0TS1640 |
| Max Storage Temperature: | 70 °C |
| Min Storage Temperature: | -40 °C |
| Max Operating Temperature: | 78 °C |
| Min Operating Temperature: | 0 °C |
| Service & Support: | Limited warranty - 5 years |
| Power Consumption: | 10.75 Watt (average) 6.1 Watt (idle) |
| Interfaces: | 1 x PCI Express 3.1 x4 (NVMe) |
| Compatible Bay: | 2.5" |
| Non-Recoverable Errors: | 1 per 10^17 |
| MTBF: | 2,000,000 hours |
| Average Latency: | 239 μs |
| Maximum 4KB Random Read: | 306520 IOPS |
| Maximum 4KB Random Write: | 88210 IOPS |
| Internal Data Rate: | 2540 MBps (read) / 1240 MBps (write) |
| Drive Writes Per Day (DWPD): | 2 |
| Weight: | 95 g |
| Features: | Instant Secure Erase (ISE), 64-layer 3D BiCS FLASH, NVM Express (NVMe) 1.3 |
| Interface: | U.2 PCIe 3.1 x4 (NVMe) |
| Form Factor: | 2.5" |
| NAND Flash Memory Type: | 3D triple-level cell (TLC) |
| Encryption Algorithm: | 256-bit AES |
| Interfaces: | 1 x PCI Express 3.1 x4 (NVMe) |
| Compatible Bay: | 2.5" |
| Power Consumption: | 10.75 Watt (average) 6.1 Watt (idle) |
| Service & Support: | Limited warranty - 5 years |
| Min Operating Temperature: | 0 °C |
| Max Operating Temperature: | 78 °C |
| Min Storage Temperature: | -40 °C |
| Max Storage Temperature: | 70 °C |
| MTBF: | 2,000,000 hours |
| Non-Recoverable Errors: | 1 per 10^17 |
| Maximum 4KB Random Write: | 88210 IOPS |
| Maximum 4KB Random Read: | 306520 IOPS |
| Average Latency: | 239 μs |
| Internal Data Rate: | 2540 MBps (read) / 1240 MBps (write) |
| Drive Writes Per Day (DWPD): | 2 |
| Manufacturer Part No: | 0TS1640 |
| Device Type: | Solid state drive - internal |
| Capacity: | 6400 GB |
| Encryption Algorithm: | 256-bit AES |
| NAND Flash Memory Type: | 3D triple-level cell (TLC) |
| Form Factor: | 2.5" |
| Interface: | U.2 PCIe 3.1 x4 (NVMe) |
| Features: | Instant Secure Erase (ISE), 64-layer 3D BiCS FLASH, NVM Express (NVMe) 1.3 |
| Weight: | 95 g |
| Manufacturer: | HGST |
| Max Storage Temperature: | 70 °C |
| Min Storage Temperature: | -40 °C |
| Max Operating Temperature: | 78 °C |
| Min Operating Temperature: | 0 °C |
| Service & Support: | Limited warranty - 5 years |
| Power Consumption: | 10.75 Watt (average) 6.1 Watt (idle) |
| Compatible Bay: | 2.5" |
| Interfaces: | 1 x PCI Express 3.1 x4 (NVMe) |
| MTBF: | 2,000,000 hours |
| Non-Recoverable Errors: | 1 per 10^17 |
| Average Latency: | 239 μs |
| Maximum 4KB Random Read: | 306520 IOPS |
| Maximum 4KB Random Write: | 88210 IOPS |
| Internal Data Rate: | 2540 MBps (read) / 1240 MBps (write) |
| Drive Writes Per Day (DWPD): | 2 |
| Weight: | 95 g |
| Features: | Instant Secure Erase (ISE), 64-layer 3D BiCS FLASH, NVM Express (NVMe) 1.3 |
| Interface: | U.2 PCIe 3.1 x4 (NVMe) |
| Form Factor: | 2.5" |
| Encryption Algorithm: | 256-bit AES |
| NAND Flash Memory Type: | 3D triple-level cell (TLC) |
| Capacity: | 6400 GB |
| Device Type: | Solid state drive - internal |
| Manufacturer Part No: | 0TS1640 |
| Manufacturer: | HGST |
| Manufacturer: | HGST |
| Manufacturer Part No: | 0TS1640 |
| Device Type: | Solid state drive - internal |
| Capacity: | 6400 GB |
| Encryption Algorithm: | 256-bit AES |
| NAND Flash Memory Type: | 3D triple-level cell (TLC) |
| Form Factor: | 2.5" |
| Interface: | U.2 PCIe 3.1 x4 (NVMe) |
| Features: | Instant Secure Erase (ISE), 64-layer 3D BiCS FLASH, NVM Express (NVMe) 1.3 |
| Weight: | 95 g |
| Drive Writes Per Day (DWPD): | 2 |
| Internal Data Rate: | 2540 MBps (read) / 1240 MBps (write) |
| Maximum 4KB Random Write: | 88210 IOPS |
| Maximum 4KB Random Read: | 306520 IOPS |
| Average Latency: | 239 μs |
| MTBF: | 2,000,000 hours |
| Non-Recoverable Errors: | 1 per 10^17 |
| Interfaces: | 1 x PCI Express 3.1 x4 (NVMe) |
| Compatible Bay: | 2.5" |
| Power Consumption: | 10.75 Watt (average) 6.1 Watt (idle) |
| Service & Support: | Limited warranty - 5 years |
| Min Operating Temperature: | 0 °C |
| Max Operating Temperature: | 78 °C |
| Min Storage Temperature: | -40 °C |
| Max Storage Temperature: | 70 °C |
| Capacity: | 6400 GB |
| Device Type: | Solid state drive - internal |
| Manufacturer Part No: | 0TS1640 |
| Manufacturer: | HGST |
| Service & Support: | Limited warranty - 5 years |
| Min Operating Temperature: | 0 °C |
| Max Operating Temperature: | 78 °C |
| Min Storage Temperature: | -40 °C |
| Max Storage Temperature: | 70 °C |
| Compatible Bay: | 2.5" |
| Power Consumption: | 10.75 Watt (average) 6.1 Watt (idle) |
| Interfaces: | 1 x PCI Express 3.1 x4 (NVMe) |
| Maximum 4KB Random Read: | 306520 IOPS |
| Average Latency: | 239 μs |
| MTBF: | 2,000,000 hours |
| Non-Recoverable Errors: | 1 per 10^17 |
| Maximum 4KB Random Write: | 88210 IOPS |
| Internal Data Rate: | 2540 MBps (read) / 1240 MBps (write) |
| Drive Writes Per Day (DWPD): | 2 |
| Manufacturer: | HGST |
| Manufacturer Part No: | 0TS1640 |
| Device Type: | Solid state drive - internal |
| Capacity: | 6400 GB |
| Encryption Algorithm: | 256-bit AES |
| NAND Flash Memory Type: | 3D triple-level cell (TLC) |
| Form Factor: | 2.5" |
| Interface: | U.2 PCIe 3.1 x4 (NVMe) |
| Features: | Instant Secure Erase (ISE), 64-layer 3D BiCS FLASH, NVM Express (NVMe) 1.3 |
| Weight: | 95 g |
| Drive Writes Per Day (DWPD): | 2 |
| Internal Data Rate: | 2540 MBps (read) / 1240 MBps (write) |
| Maximum 4KB Random Write: | 88210 IOPS |
| Maximum 4KB Random Read: | 306520 IOPS |
| Average Latency: | 239 μs |
| MTBF: | 2,000,000 hours |
| Non-Recoverable Errors: | 1 per 10^17 |
| Interfaces: | 1 x PCI Express 3.1 x4 (NVMe) |
| Compatible Bay: | 2.5" |
| Power Consumption: | 10.75 Watt (average) 6.1 Watt (idle) |
| Service & Support: | Limited warranty - 5 years |
| Min Operating Temperature: | 0 °C |
| Max Operating Temperature: | 78 °C |
| Min Storage Temperature: | -40 °C |
| Max Storage Temperature: | 70 °C |
| Max Storage Temperature: | 70 °C |
| Max Operating Temperature: | 78 °C |
| Min Storage Temperature: | -40 °C |
| Min Operating Temperature: | 0 °C |
| Service & Support: | Limited warranty - 5 years |
| Compatible Bay: | 2.5" |
| Power Consumption: | 10.75 Watt (average) 6.1 Watt (idle) |
| Manufacturer: | HGST |
| Manufacturer Part No: | 0TS1640 |
| Device Type: | Solid state drive - internal |
| Capacity: | 6400 GB |
| Encryption Algorithm: | 256-bit AES |
| NAND Flash Memory Type: | 3D triple-level cell (TLC) |
| Form Factor: | 2.5" |
| Interface: | U.2 PCIe 3.1 x4 (NVMe) |
| Features: | Instant Secure Erase (ISE), 64-layer 3D BiCS FLASH, NVM Express (NVMe) 1.3 |
| Weight: | 95 g |
| Drive Writes Per Day (DWPD): | 2 |
| Internal Data Rate: | 2540 MBps (read) / 1240 MBps (write) |
| Maximum 4KB Random Write: | 88210 IOPS |
| Maximum 4KB Random Read: | 306520 IOPS |
| Average Latency: | 239 μs |
| MTBF: | 2,000,000 hours |
| Non-Recoverable Errors: | 1 per 10^17 |
| Interfaces: | 1 x PCI Express 3.1 x4 (NVMe) |
| Compatible Bay: | 2.5" |
| Power Consumption: | 10.75 Watt (average) 6.1 Watt (idle) |
| Service & Support: | Limited warranty - 5 years |
| Min Operating Temperature: | 0 °C |
| Max Operating Temperature: | 78 °C |
| Min Storage Temperature: | -40 °C |
| Max Storage Temperature: | 70 °C |
| Interfaces: | 1 x PCI Express 3.1 x4 (NVMe) |
| Non-Recoverable Errors: | 1 per 10^17 |
| Average Latency: | 239 μs |
| MTBF: | 2,000,000 hours |
| Weight: | 95 g |
| Drive Writes Per Day (DWPD): | 2 |
| Internal Data Rate: | 2540 MBps (read) / 1240 MBps (write) |
| Maximum 4KB Random Write: | 88210 IOPS |
| Maximum 4KB Random Read: | 306520 IOPS |
| Interface: | U.2 PCIe 3.1 x4 (NVMe) |
| Features: | Instant Secure Erase (ISE), 64-layer 3D BiCS FLASH, NVM Express (NVMe) 1.3 |
| Form Factor: | 2.5" |
| Manufacturer: | HGST |
| Manufacturer Part No: | 0TS1640 |
| Device Type: | Solid state drive - internal |
| Capacity: | 6400 GB |
| Encryption Algorithm: | 256-bit AES |
| NAND Flash Memory Type: | 3D triple-level cell (TLC) |
| Manufacturer: | HGST |
| Manufacturer Part No: | 0TS1640 |
| Device Type: | Solid state drive - internal |
| Capacity: | 6400 GB |
| Encryption Algorithm: | 256-bit AES |
| NAND Flash Memory Type: | 3D triple-level cell (TLC) |
| Form Factor: | 2.5" |
| Interface: | U.2 PCIe 3.1 x4 (NVMe) |
| Features: | Instant Secure Erase (ISE), 64-layer 3D BiCS FLASH, NVM Express (NVMe) 1.3 |
| Weight: | 95 g |
| Drive Writes Per Day (DWPD): | 2 |
| Internal Data Rate: | 2540 MBps (read) / 1240 MBps (write) |
| Maximum 4KB Random Write: | 88210 IOPS |
| Maximum 4KB Random Read: | 306520 IOPS |
| Average Latency: | 239 μs |
| MTBF: | 2,000,000 hours |
| Non-Recoverable Errors: | 1 per 10^17 |
| Interfaces: | 1 x PCI Express 3.1 x4 (NVMe) |
| Compatible Bay: | 2.5" |
| Power Consumption: | 10.75 Watt (average) 6.1 Watt (idle) |
| Service & Support: | Limited warranty - 5 years |
| Min Operating Temperature: | 0 °C |
| Max Operating Temperature: | 78 °C |
| Min Storage Temperature: | -40 °C |
| Max Storage Temperature: | 70 °C |
| Manufacturer: | HGST |
| Manufacturer Part No: | 0TS1640 |
| Device Type: | Solid state drive - internal |
| Capacity: | 6400 GB |
| Encryption Algorithm: | 256-bit AES |
| NAND Flash Memory Type: | 3D triple-level cell (TLC) |
| Form Factor: | 2.5" |
| Interface: | U.2 PCIe 3.1 x4 (NVMe) |
| Features: | Instant Secure Erase (ISE), 64-layer 3D BiCS FLASH, NVM Express (NVMe) 1.3 |
| Weight: | 95 g |
| Drive Writes Per Day (DWPD): | 2 |
| Internal Data Rate: | 2540 MBps (read) / 1240 MBps (write) |
| Maximum 4KB Random Write: | 88210 IOPS |
| Maximum 4KB Random Read: | 306520 IOPS |
| Average Latency: | 239 μs |
| MTBF: | 2,000,000 hours |
| Non-Recoverable Errors: | 1 per 10^17 |
| Interfaces: | 1 x PCI Express 3.1 x4 (NVMe) |
| Compatible Bay: | 2.5" |
| Power Consumption: | 10.75 Watt (average) 6.1 Watt (idle) |
| Service & Support: | Limited warranty - 5 years |
| Min Operating Temperature: | 0 °C |
| Max Operating Temperature: | 78 °C |
| Min Storage Temperature: | -40 °C |
| Max Storage Temperature: | 70 °C |
| Manufacturer: | HGST |
| Manufacturer Part No: | 0TS1640 |
| Device Type: | Solid state drive - internal |
| Capacity: | 6400 GB |
| Encryption Algorithm: | 256-bit AES |
| NAND Flash Memory Type: | 3D triple-level cell (TLC) |
| Form Factor: | 2.5" |
| Interface: | U.2 PCIe 3.1 x4 (NVMe) |
| Features: | Instant Secure Erase (ISE), 64-layer 3D BiCS FLASH, NVM Express (NVMe) 1.3 |
| Weight: | 95 g |
| Drive Writes Per Day (DWPD): | 2 |
| Internal Data Rate: | 2540 MBps (read) / 1240 MBps (write) |
| Maximum 4KB Random Write: | 88210 IOPS |
| Maximum 4KB Random Read: | 306520 IOPS |
| Average Latency: | 239 μs |
| MTBF: | 2,000,000 hours |
| Non-Recoverable Errors: | 1 per 10^17 |
| Interfaces: | 1 x PCI Express 3.1 x4 (NVMe) |
| Compatible Bay: | 2.5" |
| Power Consumption: | 10.75 Watt (average) 6.1 Watt (idle) |
| Service & Support: | Limited warranty - 5 years |
| Min Operating Temperature: | 0 °C |
| Max Operating Temperature: | 78 °C |
| Min Storage Temperature: | -40 °C |
| Max Storage Temperature: | 70 °C |
| Manufacturer: | HGST |
| Manufacturer Part No: | 0TS1640 |
| Device Type: | Solid state drive - internal |
| Capacity: | 6400 GB |
| Encryption Algorithm: | 256-bit AES |
| NAND Flash Memory Type: | 3D triple-level cell (TLC) |
| Form Factor: | 2.5" |
| Interface: | U.2 PCIe 3.1 x4 (NVMe) |
| Features: | Instant Secure Erase (ISE), 64-layer 3D BiCS FLASH, NVM Express (NVMe) 1.3 |
| Weight: | 95 g |
| Drive Writes Per Day (DWPD): | 2 |
| Internal Data Rate: | 2540 MBps (read) / 1240 MBps (write) |
| Maximum 4KB Random Write: | 88210 IOPS |
| Maximum 4KB Random Read: | 306520 IOPS |
| Average Latency: | 239 μs |
| MTBF: | 2,000,000 hours |
| Non-Recoverable Errors: | 1 per 10^17 |
| Interfaces: | 1 x PCI Express 3.1 x4 (NVMe) |
| Compatible Bay: | 2.5" |
| Power Consumption: | 10.75 Watt (average) 6.1 Watt (idle) |
| Service & Support: | Limited warranty - 5 years |
| Min Operating Temperature: | 0 °C |
| Max Operating Temperature: | 78 °C |
| Min Storage Temperature: | -40 °C |
| Max Storage Temperature: | 70 °C |
| Гаранция: | 60 месеца |
Коментари за продукта
Няма публикувани коментари
За да публикувате вашето мнение е необходимо да сте регистриран потребител
Вход Регистрирай се Вход