SCU:0TS1639
Max Storage Temperature: 85 °C
Encryption Algorithm: 256-bit AES
NAND Flash Memory Type: 3D triple-level cell (TLC)
Features: Instant Secure Erase (ISE), 64-layer 3D BiCS FLASH, NVM Express (NVMe) 1.3
Weight: 95 g
Drive Writes Per Day (DWPD): 2
  • Изчерпан
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Цена за доставка: 4.99 лв с ДДС
Безплатна доставка при поръчка над 99 лв с ДДС
сравни добави в любими
Изчерпан

Max Storage Temperature: 85 °C
Encryption Algorithm: 256-bit AES
NAND Flash Memory Type: 3D triple-level cell (TLC)
Features: Instant Secure Erase (ISE), 64-layer 3D BiCS FLASH, NVM Express (NVMe) 1.3
Weight: 95 g
Drive Writes Per Day (DWPD): 2
Internal Data Rate: 2500 MBps (read) / 1200 MBps (write)
Form Factor: 2.5"
Interface: U.2 PCIe 3.0 x4 (NVMe)
Min Storage Temperature: -40 °C
Manufacturer: HGST
Manufacturer Part No: 0TS1639
Device Type: Solid state drive - internal
Capacity: 3200 GB
Service & Support: Limited warranty - 5 years
Max Operating Temperature: 78 °C
Min Operating Temperature: 0 °C
Average Latency: 239 μs
MTBF: 2,000,000 hours
Non-Recoverable Errors: 1 per 10^17
Power Consumption: 10.75 Watt (average)
5.9 Watt (idle)
Compatible Bay: 2.5"
Interfaces: 1 x PCI Express 3.0 x4 (NVMe)
Maximum 4KB Random Read: 332510 IOPS
Maximum 4KB Random Write: 88140 IOPS
Max Storage Temperature: 85 °C
Min Storage Temperature: -40 °C
Max Operating Temperature: 78 °C
Min Operating Temperature: 0 °C
Service & Support: Limited warranty - 5 years
Power Consumption: 10.75 Watt (average)
5.9 Watt (idle)
Compatible Bay: 2.5"
Interfaces: 1 x PCI Express 3.0 x4 (NVMe)
Non-Recoverable Errors: 1 per 10^17
MTBF: 2,000,000 hours
Average Latency: 239 μs
Maximum 4KB Random Read: 332510 IOPS
Maximum 4KB Random Write: 88140 IOPS
Internal Data Rate: 2500 MBps (read) / 1200 MBps (write)
Drive Writes Per Day (DWPD): 2
Weight: 95 g
Features: Instant Secure Erase (ISE), 64-layer 3D BiCS FLASH, NVM Express (NVMe) 1.3
Interface: U.2 PCIe 3.0 x4 (NVMe)
Form Factor: 2.5"
NAND Flash Memory Type: 3D triple-level cell (TLC)
Encryption Algorithm: 256-bit AES
Capacity: 3200 GB
Device Type: Solid state drive - internal
Manufacturer Part No: 0TS1639
Manufacturer: HGST
Manufacturer: HGST
Manufacturer Part No: 0TS1639
Device Type: Solid state drive - internal
Capacity: 3200 GB
Encryption Algorithm: 256-bit AES
NAND Flash Memory Type: 3D triple-level cell (TLC)
Form Factor: 2.5"
Interface: U.2 PCIe 3.0 x4 (NVMe)
Features: Instant Secure Erase (ISE), 64-layer 3D BiCS FLASH, NVM Express (NVMe) 1.3
Weight: 95 g
Drive Writes Per Day (DWPD): 2
Internal Data Rate: 2500 MBps (read) / 1200 MBps (write)
Maximum 4KB Random Write: 88140 IOPS
Maximum 4KB Random Read: 332510 IOPS
Average Latency: 239 μs
MTBF: 2,000,000 hours
Non-Recoverable Errors: 1 per 10^17
Interfaces: 1 x PCI Express 3.0 x4 (NVMe)
Compatible Bay: 2.5"
Power Consumption: 10.75 Watt (average)
5.9 Watt (idle)
Service & Support: Limited warranty - 5 years
Min Operating Temperature: 0 °C
Max Operating Temperature: 78 °C
Min Storage Temperature: -40 °C
Max Storage Temperature: 85 °C
Min Storage Temperature: -40 °C
Max Storage Temperature: 85 °C
Service & Support: Limited warranty - 5 years
Min Operating Temperature: 0 °C
Max Operating Temperature: 78 °C
Power Consumption: 10.75 Watt (average)
5.9 Watt (idle)
Compatible Bay: 2.5"
Interfaces: 1 x PCI Express 3.0 x4 (NVMe)
Non-Recoverable Errors: 1 per 10^17
Drive Writes Per Day (DWPD): 2
Internal Data Rate: 2500 MBps (read) / 1200 MBps (write)
Maximum 4KB Random Write: 88140 IOPS
Maximum 4KB Random Read: 332510 IOPS
Average Latency: 239 μs
MTBF: 2,000,000 hours
Weight: 95 g
Features: Instant Secure Erase (ISE), 64-layer 3D BiCS FLASH, NVM Express (NVMe) 1.3
NAND Flash Memory Type: 3D triple-level cell (TLC)
Form Factor: 2.5"
Interface: U.2 PCIe 3.0 x4 (NVMe)
Encryption Algorithm: 256-bit AES
Capacity: 3200 GB
Device Type: Solid state drive - internal
Manufacturer Part No: 0TS1639
Manufacturer: HGST
Device Type: Solid state drive - internal
Manufacturer Part No: 0TS1639
Manufacturer: HGST
Manufacturer: HGST
Manufacturer Part No: 0TS1639
Device Type: Solid state drive - internal
Capacity: 3200 GB
Encryption Algorithm: 256-bit AES
NAND Flash Memory Type: 3D triple-level cell (TLC)
Form Factor: 2.5"
Interface: U.2 PCIe 3.0 x4 (NVMe)
Features: Instant Secure Erase (ISE), 64-layer 3D BiCS FLASH, NVM Express (NVMe) 1.3
Weight: 95 g
Drive Writes Per Day (DWPD): 2
Internal Data Rate: 2500 MBps (read) / 1200 MBps (write)
Maximum 4KB Random Write: 88140 IOPS
Maximum 4KB Random Read: 332510 IOPS
Average Latency: 239 μs
MTBF: 2,000,000 hours
Non-Recoverable Errors: 1 per 10^17
Interfaces: 1 x PCI Express 3.0 x4 (NVMe)
Compatible Bay: 2.5"
Power Consumption: 10.75 Watt (average)
5.9 Watt (idle)
Service & Support: Limited warranty - 5 years
Min Operating Temperature: 0 °C
Max Operating Temperature: 78 °C
Min Storage Temperature: -40 °C
Max Storage Temperature: 85 °C
Drive Writes Per Day (DWPD): 2
Weight: 95 g
Features: Instant Secure Erase (ISE), 64-layer 3D BiCS FLASH, NVM Express (NVMe) 1.3
Interface: U.2 PCIe 3.0 x4 (NVMe)
Form Factor: 2.5"
Encryption Algorithm: 256-bit AES
NAND Flash Memory Type: 3D triple-level cell (TLC)
Manufacturer: HGST
Manufacturer Part No: 0TS1639
Device Type: Solid state drive - internal
Capacity: 3200 GB
Max Storage Temperature: 85 °C
Max Operating Temperature: 78 °C
Min Storage Temperature: -40 °C
Min Operating Temperature: 0 °C
Service & Support: Limited warranty - 5 years
Power Consumption: 10.75 Watt (average)
5.9 Watt (idle)
Compatible Bay: 2.5"
Interfaces: 1 x PCI Express 3.0 x4 (NVMe)
Non-Recoverable Errors: 1 per 10^17
MTBF: 2,000,000 hours
Average Latency: 239 μs
Maximum 4KB Random Read: 332510 IOPS
Maximum 4KB Random Write: 88140 IOPS
Drive Writes Per Day (DWPD): 2
Internal Data Rate: 2500 MBps (read) / 1200 MBps (write)
Weight: 95 g
Features: Instant Secure Erase (ISE), 64-layer 3D BiCS FLASH, NVM Express (NVMe) 1.3
Form Factor: 2.5"
Interface: U.2 PCIe 3.0 x4 (NVMe)
NAND Flash Memory Type: 3D triple-level cell (TLC)
Encryption Algorithm: 256-bit AES
Capacity: 3200 GB
Manufacturer: HGST
Manufacturer Part No: 0TS1639
Device Type: Solid state drive - internal
Capacity: 3200 GB
Encryption Algorithm: 256-bit AES
NAND Flash Memory Type: 3D triple-level cell (TLC)
Form Factor: 2.5"
Interface: U.2 PCIe 3.0 x4 (NVMe)
Features: Instant Secure Erase (ISE), 64-layer 3D BiCS FLASH, NVM Express (NVMe) 1.3
Weight: 95 g
Drive Writes Per Day (DWPD): 2
Internal Data Rate: 2500 MBps (read) / 1200 MBps (write)
Maximum 4KB Random Write: 88140 IOPS
Maximum 4KB Random Read: 332510 IOPS
Average Latency: 239 μs
MTBF: 2,000,000 hours
Non-Recoverable Errors: 1 per 10^17
Interfaces: 1 x PCI Express 3.0 x4 (NVMe)
Compatible Bay: 2.5"
Power Consumption: 10.75 Watt (average)
5.9 Watt (idle)
Service & Support: Limited warranty - 5 years
Min Operating Temperature: 0 °C
Max Operating Temperature: 78 °C
Min Storage Temperature: -40 °C
Max Storage Temperature: 85 °C
Min Storage Temperature: -40 °C
Max Storage Temperature: 85 °C
Max Operating Temperature: 78 °C
Min Operating Temperature: 0 °C
Service & Support: Limited warranty - 5 years
MTBF: 2,000,000 hours
Non-Recoverable Errors: 1 per 10^17
Interfaces: 1 x PCI Express 3.0 x4 (NVMe)
Compatible Bay: 2.5"
Power Consumption: 10.75 Watt (average)
5.9 Watt (idle)
Average Latency: 239 μs
Maximum 4KB Random Read: 332510 IOPS
Maximum 4KB Random Write: 88140 IOPS
Manufacturer: HGST
Manufacturer Part No: 0TS1639
Device Type: Solid state drive - internal
Capacity: 3200 GB
Encryption Algorithm: 256-bit AES
NAND Flash Memory Type: 3D triple-level cell (TLC)
Form Factor: 2.5"
Interface: U.2 PCIe 3.0 x4 (NVMe)
Features: Instant Secure Erase (ISE), 64-layer 3D BiCS FLASH, NVM Express (NVMe) 1.3
Weight: 95 g
Drive Writes Per Day (DWPD): 2
Internal Data Rate: 2500 MBps (read) / 1200 MBps (write)
Maximum 4KB Random Write: 88140 IOPS
Maximum 4KB Random Read: 332510 IOPS
Average Latency: 239 μs
MTBF: 2,000,000 hours
Non-Recoverable Errors: 1 per 10^17
Interfaces: 1 x PCI Express 3.0 x4 (NVMe)
Compatible Bay: 2.5"
Power Consumption: 10.75 Watt (average)
5.9 Watt (idle)
Service & Support: Limited warranty - 5 years
Min Operating Temperature: 0 °C
Max Operating Temperature: 78 °C
Min Storage Temperature: -40 °C
Max Storage Temperature: 85 °C
Internal Data Rate: 2500 MBps (read) / 1200 MBps (write)
Manufacturer: HGST
Manufacturer Part No: 0TS1639
Device Type: Solid state drive - internal
Capacity: 3200 GB
Encryption Algorithm: 256-bit AES
NAND Flash Memory Type: 3D triple-level cell (TLC)
Form Factor: 2.5"
Interface: U.2 PCIe 3.0 x4 (NVMe)
Features: Instant Secure Erase (ISE), 64-layer 3D BiCS FLASH, NVM Express (NVMe) 1.3
Weight: 95 g
Drive Writes Per Day (DWPD): 2
Internal Data Rate: 2500 MBps (read) / 1200 MBps (write)
Maximum 4KB Random Write: 88140 IOPS
Maximum 4KB Random Read: 332510 IOPS
Average Latency: 239 μs
MTBF: 2,000,000 hours
Non-Recoverable Errors: 1 per 10^17
Interfaces: 1 x PCI Express 3.0 x4 (NVMe)
Compatible Bay: 2.5"
Power Consumption: 10.75 Watt (average)
5.9 Watt (idle)
Service & Support: Limited warranty - 5 years
Min Operating Temperature: 0 °C
Max Operating Temperature: 78 °C
Min Storage Temperature: -40 °C
Max Storage Temperature: 85 °C
Manufacturer: HGST
Manufacturer Part No: 0TS1639
Device Type: Solid state drive - internal
Capacity: 3200 GB
Encryption Algorithm: 256-bit AES
NAND Flash Memory Type: 3D triple-level cell (TLC)
Form Factor: 2.5"
Interface: U.2 PCIe 3.0 x4 (NVMe)
Features: Instant Secure Erase (ISE), 64-layer 3D BiCS FLASH, NVM Express (NVMe) 1.3
Weight: 95 g
Drive Writes Per Day (DWPD): 2
Internal Data Rate: 2500 MBps (read) / 1200 MBps (write)
Maximum 4KB Random Write: 88140 IOPS
Maximum 4KB Random Read: 332510 IOPS
Average Latency: 239 μs
MTBF: 2,000,000 hours
Non-Recoverable Errors: 1 per 10^17
Interfaces: 1 x PCI Express 3.0 x4 (NVMe)
Compatible Bay: 2.5"
Power Consumption: 10.75 Watt (average)
5.9 Watt (idle)
Service & Support: Limited warranty - 5 years
Min Operating Temperature: 0 °C
Max Operating Temperature: 78 °C
Min Storage Temperature: -40 °C
Max Storage Temperature: 85 °C
Manufacturer: HGST
Manufacturer Part No: 0TS1639
Device Type: Solid state drive - internal
Capacity: 3200 GB
Encryption Algorithm: 256-bit AES
NAND Flash Memory Type: 3D triple-level cell (TLC)
Form Factor: 2.5"
Interface: U.2 PCIe 3.0 x4 (NVMe)
Features: Instant Secure Erase (ISE), 64-layer 3D BiCS FLASH, NVM Express (NVMe) 1.3
Weight: 95 g
Drive Writes Per Day (DWPD): 2
Internal Data Rate: 2500 MBps (read) / 1200 MBps (write)
Maximum 4KB Random Write: 88140 IOPS
Maximum 4KB Random Read: 332510 IOPS
Average Latency: 239 μs
MTBF: 2,000,000 hours
Non-Recoverable Errors: 1 per 10^17
Interfaces: 1 x PCI Express 3.0 x4 (NVMe)
Compatible Bay: 2.5"
Power Consumption: 10.75 Watt (average)
5.9 Watt (idle)
Service & Support: Limited warranty - 5 years
Min Operating Temperature: 0 °C
Max Operating Temperature: 78 °C
Min Storage Temperature: -40 °C
Max Storage Temperature: 85 °C
Гаранция: 60 месеца

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