| SCU: | MZ-N6E2T0BW |
| Партиден номер: | MZ-N6E2T0BW |
| Номер на модела: | SSD Samsung 860 EVO Series, 2 TB 3D V-NAND Flash, M.2 |
| Sequential Write: | 500 MB/s |
| Sequential Read: | 550 MB/s |
| Interface: | SATA 6Gb/s |
| Capacity: | 2TB |
- Изчерпан
|
0.00 лв без ДДС
0.00 лв с ДДС
Цена за доставка: 4.99 лв с ДДС
Безплатна доставка при поръчка над 99 лв с ДДС
сравни
добави в любими
Изчерпан
Цена за доставка: 4.99 лв с ДДС
Безплатна доставка при поръчка над 99 лв с ДДС
| Партиден номер: | MZ-N6E2T0BW |
| Номер на модела: | SSD Samsung 860 EVO Series, 2 TB 3D V-NAND Flash, M.2 |
| Sequential Write: | 500 MB/s |
| Sequential Read: | 550 MB/s |
| Interface: | SATA 6Gb/s |
| Capacity: | 2TB |
| Form Factor: | SSD М.2 - 80.0 mm |
| Type: | Internal |
| Manufacturer: | SAMSUNG |
| Manufacturer Part No: | MZ-N6E2T0BW |
| Device Type: | Solid state drive - internal |
| Capacity: | 2 TB |
| Hardware Encryption: | Yes |
| Encryption Algorithm: | 256-bit AES |
| NAND Flash Memory Type: | 3D multi-level cell (MLC) |
| Form Factor: | M.2 2280 |
| Interface: | SATA 6Gb/s |
| Buffer Size: | 2 GB |
| Features: | Shock resistant, TRIM support, Auto Garbage Collection Algorithm, TurboWrite Technology, eDrive, Samsung MJX Controller, 3-bit 3D V-NAND Technology, S.M.A.R.T., 256-bit AES, IEEE 1667 |
| Weight: | 8 g |
| SSD Endurance: | 1200 TB |
| Drive Transfer Rate: | 600 MBps (external) |
| Internal Data Rate: | 550 MBps (read) / 520 MBps (write) |
| Maximum 4KB Random Write: | 88000 IOPS |
| Maximum 4KB Random Read: | 97000 IOPS |
| MTBF: | 1,500,000 hours |
| Interfaces: | 1 x SATA 6 Gb/s - M.2 Card |
| Compatible Bay: | M.2 2280 |
| Power Consumption: | 3 Watt (average) 4.5 Watt (maximum) |
| Service & Support: | Limited warranty - 5 years |
| Min Operating Temperature: | 0 °C |
| Max Operating Temperature: | 70 °C |
| Shock Tolerance (operating): | 1500 g @ 0.5 ms half-sine |
| Manufacturer: | SAMSUNG |
| Manufacturer Part No: | MZ-N6E2T0BW |
| Device Type: | Solid state drive - internal |
| Capacity: | 2 TB |
| Hardware Encryption: | Yes |
| Encryption Algorithm: | 256-bit AES |
| NAND Flash Memory Type: | 3D multi-level cell (MLC) |
| Form Factor: | M.2 2280 |
| Interface: | SATA 6Gb/s |
| Buffer Size: | 2 GB |
| Features: | Shock resistant, TRIM support, Auto Garbage Collection Algorithm, TurboWrite Technology, eDrive, Samsung MJX Controller, 3-bit 3D V-NAND Technology, S.M.A.R.T., 256-bit AES, IEEE 1667 |
| Weight: | 8 g |
| SSD Endurance: | 1200 TB |
| Drive Transfer Rate: | 600 MBps (external) |
| Internal Data Rate: | 550 MBps (read) / 520 MBps (write) |
| Maximum 4KB Random Write: | 88000 IOPS |
| Maximum 4KB Random Read: | 97000 IOPS |
| MTBF: | 1,500,000 hours |
| Interfaces: | 1 x SATA 6 Gb/s - M.2 Card |
| Compatible Bay: | M.2 2280 |
| Power Consumption: | 3 Watt (average) 4.5 Watt (maximum) |
| Service & Support: | Limited warranty - 5 years |
| Min Operating Temperature: | 0 °C |
| Max Operating Temperature: | 70 °C |
| Shock Tolerance (operating): | 1500 g @ 0.5 ms half-sine |
| Manufacturer: | SAMSUNG |
| Manufacturer Part No: | MZ-N6E2T0BW |
| Device Type: | Solid state drive - internal |
| Capacity: | 2 TB |
| Hardware Encryption: | Yes |
| Encryption Algorithm: | 256-bit AES |
| NAND Flash Memory Type: | 3D multi-level cell (MLC) |
| Form Factor: | M.2 2280 |
| Interface: | SATA 6Gb/s |
| Buffer Size: | 2 GB |
| Features: | Shock resistant, TRIM support, Auto Garbage Collection Algorithm, TurboWrite Technology, eDrive, Samsung MJX Controller, 3-bit 3D V-NAND Technology, S.M.A.R.T., 256-bit AES, IEEE 1667 |
| Weight: | 8 g |
| SSD Endurance: | 1200 TB |
| Drive Transfer Rate: | 600 MBps (external) |
| Internal Data Rate: | 550 MBps (read) / 520 MBps (write) |
| Maximum 4KB Random Write: | 88000 IOPS |
| Maximum 4KB Random Read: | 97000 IOPS |
| MTBF: | 1,500,000 hours |
| Interfaces: | 1 x SATA 6 Gb/s - M.2 Card |
| Compatible Bay: | M.2 2280 |
| Power Consumption: | 3 Watt (average) 4.5 Watt (maximum) |
| Service & Support: | Limited warranty - 5 years |
| Min Operating Temperature: | 0 °C |
| Max Operating Temperature: | 70 °C |
| Shock Tolerance (operating): | 1500 g @ 0.5 ms half-sine |
| Manufacturer: | SAMSUNG |
| Manufacturer Part No: | MZ-N6E2T0BW |
| Device Type: | Solid state drive - internal |
| Capacity: | 2 TB |
| Hardware Encryption: | Yes |
| Encryption Algorithm: | 256-bit AES |
| NAND Flash Memory Type: | 3D multi-level cell (MLC) |
| Form Factor: | M.2 2280 |
| Interface: | SATA 6Gb/s |
| Buffer Size: | 2 GB |
| Features: | Shock resistant, TRIM support, Auto Garbage Collection Algorithm, TurboWrite Technology, eDrive, Samsung MJX Controller, 3-bit 3D V-NAND Technology, S.M.A.R.T., 256-bit AES, IEEE 1667 |
| Weight: | 8 g |
| SSD Endurance: | 1200 TB |
| Drive Transfer Rate: | 600 MBps (external) |
| Internal Data Rate: | 550 MBps (read) / 520 MBps (write) |
| Maximum 4KB Random Write: | 88000 IOPS |
| Maximum 4KB Random Read: | 97000 IOPS |
| MTBF: | 1,500,000 hours |
| Interfaces: | 1 x SATA 6 Gb/s - M.2 Card |
| Compatible Bay: | M.2 2280 |
| Power Consumption: | 3 Watt (average) 4.5 Watt (maximum) |
| Service & Support: | Limited warranty - 5 years |
| Min Operating Temperature: | 0 °C |
| Max Operating Temperature: | 70 °C |
| Shock Tolerance (operating): | 1500 g @ 0.5 ms half-sine |
| Гаранция: | 60 месеца |
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