« назад

 

(0 коментара)

SCU:MZ-N6E500BW
Sequential Write: 500 MB/s
Sequential Read: 550 MB/s
Interface: SATA 6Gb/s
Form Factor: SSD М.2 - 80.0 mm
Capacity: 500 GB
Type: Internal
  • Изчерпан
0.00 лв без ДДС 0.00 лв с ДДС

Цена за доставка: 4.99 лв с ДДС
Безплатна доставка при поръчка над 99 лв с ДДС
сравни добави в любими
Изчерпан

Sequential Write: 500 MB/s
Sequential Read: 550 MB/s
Interface: SATA 6Gb/s
Form Factor: SSD М.2 - 80.0 mm
Capacity: 500 GB
Type: Internal
Партиден номер: MZ-N6E500BW
Номер на модела: SSD Samsung 860 EVO Series, 500 GB 3D V-NAND Flash, M.2
Manufacturer: SAMSUNG
Manufacturer Part No: MZ-N6E500BW
Device Type: Solid state drive - internal
Capacity: 500 GB
Hardware Encryption: Yes
Encryption Algorithm: 256-bit AES
NAND Flash Memory Type: 3D multi-level cell (MLC)
Form Factor: M.2 2280
Interface: SATA 6Gb/s
Buffer Size: 512 MB
Features: Shock resistant, TRIM support, Auto Garbage Collection Algorithm, TurboWrite Technology, eDrive, Samsung MJX Controller, 3-bit 3D V-NAND Technology, S.M.A.R.T., 256-bit AES, IEEE 1667
Weight: 8 g
SSD Endurance: 300 TB
Drive Transfer Rate: 600 MBps (external)
Internal Data Rate: 550 MBps (read) / 520 MBps (write)
Maximum 4KB Random Write: 88000 IOPS
Maximum 4KB Random Read: 97000 IOPS
MTBF: 1,500,000 hours
Interfaces: 1 x SATA 6 Gb/s - M.2 Card
Compatible Bay: M.2 2280
Power Consumption: 2.5 Watt (average)
4 Watt (maximum)
Service & Support: Limited warranty - 5 years
Min Operating Temperature: 0 °C
Max Operating Temperature: 70 °C
Shock Tolerance (operating): 1500 g @ 0.5 ms half-sine
Manufacturer: SAMSUNG
Manufacturer Part No: MZ-N6E500BW
Device Type: Solid state drive - internal
Capacity: 500 GB
Hardware Encryption: Yes
Encryption Algorithm: 256-bit AES
NAND Flash Memory Type: 3D multi-level cell (MLC)
Form Factor: M.2 2280
Interface: SATA 6Gb/s
Buffer Size: 512 MB
Features: Shock resistant, TRIM support, Auto Garbage Collection Algorithm, TurboWrite Technology, eDrive, Samsung MJX Controller, 3-bit 3D V-NAND Technology, S.M.A.R.T., 256-bit AES, IEEE 1667
Weight: 8 g
SSD Endurance: 300 TB
Drive Transfer Rate: 600 MBps (external)
Internal Data Rate: 550 MBps (read) / 520 MBps (write)
Maximum 4KB Random Write: 88000 IOPS
Maximum 4KB Random Read: 97000 IOPS
MTBF: 1,500,000 hours
Interfaces: 1 x SATA 6 Gb/s - M.2 Card
Compatible Bay: M.2 2280
Power Consumption: 2.5 Watt (average)
4 Watt (maximum)
Service & Support: Limited warranty - 5 years
Min Operating Temperature: 0 °C
Max Operating Temperature: 70 °C
Shock Tolerance (operating): 1500 g @ 0.5 ms half-sine
Manufacturer: SAMSUNG
Manufacturer Part No: MZ-N6E500BW
Device Type: Solid state drive - internal
Capacity: 500 GB
Hardware Encryption: Yes
Encryption Algorithm: 256-bit AES
NAND Flash Memory Type: 3D multi-level cell (MLC)
Form Factor: M.2 2280
Interface: SATA 6Gb/s
Buffer Size: 512 MB
Features: Shock resistant, TRIM support, Auto Garbage Collection Algorithm, TurboWrite Technology, eDrive, Samsung MJX Controller, 3-bit 3D V-NAND Technology, S.M.A.R.T., 256-bit AES, IEEE 1667
Weight: 8 g
SSD Endurance: 300 TB
Drive Transfer Rate: 600 MBps (external)
Internal Data Rate: 550 MBps (read) / 520 MBps (write)
Maximum 4KB Random Write: 88000 IOPS
Maximum 4KB Random Read: 97000 IOPS
MTBF: 1,500,000 hours
Interfaces: 1 x SATA 6 Gb/s - M.2 Card
Compatible Bay: M.2 2280
Power Consumption: 2.5 Watt (average)
4 Watt (maximum)
Service & Support: Limited warranty - 5 years
Min Operating Temperature: 0 °C
Max Operating Temperature: 70 °C
Shock Tolerance (operating): 1500 g @ 0.5 ms half-sine
Manufacturer: SAMSUNG
Manufacturer Part No: MZ-N6E500BW
Device Type: Solid state drive - internal
Capacity: 500 GB
Hardware Encryption: Yes
Encryption Algorithm: 256-bit AES
NAND Flash Memory Type: 3D multi-level cell (MLC)
Form Factor: M.2 2280
Interface: SATA 6Gb/s
Buffer Size: 512 MB
Features: Shock resistant, TRIM support, Auto Garbage Collection Algorithm, TurboWrite Technology, eDrive, Samsung MJX Controller, 3-bit 3D V-NAND Technology, S.M.A.R.T., 256-bit AES, IEEE 1667
Weight: 8 g
SSD Endurance: 300 TB
Drive Transfer Rate: 600 MBps (external)
Internal Data Rate: 550 MBps (read) / 520 MBps (write)
Maximum 4KB Random Write: 88000 IOPS
Maximum 4KB Random Read: 97000 IOPS
MTBF: 1,500,000 hours
Interfaces: 1 x SATA 6 Gb/s - M.2 Card
Compatible Bay: M.2 2280
Power Consumption: 2.5 Watt (average)
4 Watt (maximum)
Service & Support: Limited warranty - 5 years
Min Operating Temperature: 0 °C
Max Operating Temperature: 70 °C
Shock Tolerance (operating): 1500 g @ 0.5 ms half-sine
Гаранция: 60 месеца
 

Коментари за продукта

Оценка 0 / 5  |  0 отзива

Няма публикувани коментари

За да публикувате вашето мнение е необходимо да сте регистриран потребител

Вход Регистрирай се
 

Продукта е добавен в количката!


Към
количката
Продължи пазаруването
нагоре