| SCU: | MZ-76Q4T0BW |
| Номер на модела: | SSD Samsung 860 QVO Series, 4 TB V-NAND Flash, 2.5" Slim, SATA 6Gb/s |
| Партиден номер: | MZ-76Q4T0BW |
| Sequential Write: | 520 MB/s |
| Sequential Read: | 550 MB/s |
| Interface: | SATA 6Gb/s |
| Type: | Internal |
- Изчерпан
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Цена за доставка: 4.99 лв с ДДС
Безплатна доставка при поръчка над 99 лв с ДДС
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Изчерпан
Цена за доставка: 4.99 лв с ДДС
Безплатна доставка при поръчка над 99 лв с ДДС
| Номер на модела: | SSD Samsung 860 QVO Series, 4 TB V-NAND Flash, 2.5" Slim, SATA 6Gb/s |
| Партиден номер: | MZ-76Q4T0BW |
| Sequential Write: | 520 MB/s |
| Sequential Read: | 550 MB/s |
| Interface: | SATA 6Gb/s |
| Type: | Internal |
| Form Factor: | 2.5 " (7 mm) |
| Capacity: | 4TB |
| Manufacturer: | SAMSUNG |
| Manufacturer Part No: | MZ-76Q4T0BW |
| Device Type: | Solid state drive - internal |
| Capacity: | 4 TB |
| Hardware Encryption: | Yes |
| Encryption Algorithm: | 256-bit AES |
| NAND Flash Memory Type: | Multi-level cell (MLC) |
| Form Factor: | 2.5" |
| Interface: | SATA 6Gb/s |
| Buffer Size: | 4 GB |
| Features: | TRIM support, Garbage Collection technology, sleep mode, V-NAND Technology, Samsung MJX Controller, Low Power DDR4 SDRAM Cache, S.M.A.R.T., 256-bit AES |
| Weight: | 62 g |
| SSD Endurance: | 1440 TB |
| Internal Data Rate: | 550 MBps (read) / 520 MBps (write) |
| 4KB Random Read: | 7500 IOPS |
| 4KB Random Write: | 42000 IOPS |
| Maximum 4KB Random Write: | 89000 IOPS |
| Maximum 4KB Random Read: | 97000 IOPS |
| MTBF: | 1,500,000 hours |
| Interfaces: | 1 x SATA 6 Gb/s |
| Compatible Bay: | 2.5" |
| Power Consumption: | 3.1 Watt (average) 5.4 Watt (maximum) 0.03 Watt (idle) |
| Compliant Standards: | IEEE 1667 |
| Service & Support: | Limited warranty - 3 years |
| Min Operating Temperature: | 0 °C |
| Max Operating Temperature: | 70 °C |
| Shock Tolerance (operating): | 1500 g @ 0.5 ms half-sine |
| Manufacturer: | SAMSUNG |
| Manufacturer Part No: | MZ-76Q4T0BW |
| Device Type: | Solid state drive - internal |
| Capacity: | 4 TB |
| Hardware Encryption: | Yes |
| Encryption Algorithm: | 256-bit AES |
| NAND Flash Memory Type: | Multi-level cell (MLC) |
| Form Factor: | 2.5" |
| Interface: | SATA 6Gb/s |
| Buffer Size: | 4 GB |
| Features: | TRIM support, Garbage Collection technology, sleep mode, V-NAND Technology, Samsung MJX Controller, Low Power DDR4 SDRAM Cache, S.M.A.R.T., 256-bit AES |
| Weight: | 62 g |
| SSD Endurance: | 1440 TB |
| Internal Data Rate: | 550 MBps (read) / 520 MBps (write) |
| 4KB Random Read: | 7500 IOPS |
| 4KB Random Write: | 42000 IOPS |
| Maximum 4KB Random Write: | 89000 IOPS |
| Maximum 4KB Random Read: | 97000 IOPS |
| MTBF: | 1,500,000 hours |
| Interfaces: | 1 x SATA 6 Gb/s |
| Compatible Bay: | 2.5" |
| Power Consumption: | 3.1 Watt (average) 5.4 Watt (maximum) 0.03 Watt (idle) |
| Compliant Standards: | IEEE 1667 |
| Service & Support: | Limited warranty - 3 years |
| Min Operating Temperature: | 0 °C |
| Max Operating Temperature: | 70 °C |
| Shock Tolerance (operating): | 1500 g @ 0.5 ms half-sine |
| Manufacturer: | SAMSUNG |
| Manufacturer Part No: | MZ-76Q4T0BW |
| Device Type: | Solid state drive - internal |
| Capacity: | 4 TB |
| Hardware Encryption: | Yes |
| Encryption Algorithm: | 256-bit AES |
| NAND Flash Memory Type: | Multi-level cell (MLC) |
| Form Factor: | 2.5" |
| Interface: | SATA 6Gb/s |
| Buffer Size: | 4 GB |
| Features: | TRIM support, Garbage Collection technology, sleep mode, V-NAND Technology, Samsung MJX Controller, Low Power DDR4 SDRAM Cache, S.M.A.R.T., 256-bit AES |
| Weight: | 62 g |
| SSD Endurance: | 1440 TB |
| Internal Data Rate: | 550 MBps (read) / 520 MBps (write) |
| 4KB Random Read: | 7500 IOPS |
| 4KB Random Write: | 42000 IOPS |
| Maximum 4KB Random Write: | 89000 IOPS |
| Maximum 4KB Random Read: | 97000 IOPS |
| MTBF: | 1,500,000 hours |
| Interfaces: | 1 x SATA 6 Gb/s |
| Compatible Bay: | 2.5" |
| Power Consumption: | 3.1 Watt (average) 5.4 Watt (maximum) 0.03 Watt (idle) |
| Compliant Standards: | IEEE 1667 |
| Service & Support: | Limited warranty - 3 years |
| Min Operating Temperature: | 0 °C |
| Max Operating Temperature: | 70 °C |
| Shock Tolerance (operating): | 1500 g @ 0.5 ms half-sine |
| Manufacturer: | SAMSUNG |
| Manufacturer Part No: | MZ-76Q4T0BW |
| Device Type: | Solid state drive - internal |
| Capacity: | 4 TB |
| Hardware Encryption: | Yes |
| Encryption Algorithm: | 256-bit AES |
| NAND Flash Memory Type: | Multi-level cell (MLC) |
| Form Factor: | 2.5" |
| Interface: | SATA 6Gb/s |
| Buffer Size: | 4 GB |
| Features: | TRIM support, Garbage Collection technology, sleep mode, V-NAND Technology, Samsung MJX Controller, Low Power DDR4 SDRAM Cache, S.M.A.R.T., 256-bit AES |
| Weight: | 62 g |
| SSD Endurance: | 1440 TB |
| Internal Data Rate: | 550 MBps (read) / 520 MBps (write) |
| 4KB Random Read: | 7500 IOPS |
| 4KB Random Write: | 42000 IOPS |
| Maximum 4KB Random Write: | 89000 IOPS |
| Maximum 4KB Random Read: | 97000 IOPS |
| MTBF: | 1,500,000 hours |
| Interfaces: | 1 x SATA 6 Gb/s |
| Compatible Bay: | 2.5" |
| Power Consumption: | 3.1 Watt (average) 5.4 Watt (maximum) 0.03 Watt (idle) |
| Compliant Standards: | IEEE 1667 |
| Service & Support: | Limited warranty - 3 years |
| Min Operating Temperature: | 0 °C |
| Max Operating Temperature: | 70 °C |
| Shock Tolerance (operating): | 1500 g @ 0.5 ms half-sine |
| Manufacturer: | SAMSUNG |
| Manufacturer Part No: | MZ-76Q4T0BW |
| Device Type: | Solid state drive - internal |
| Capacity: | 4 TB |
| Hardware Encryption: | Yes |
| Encryption Algorithm: | 256-bit AES |
| NAND Flash Memory Type: | Multi-level cell (MLC) |
| Form Factor: | 2.5" |
| Interface: | SATA 6Gb/s |
| Buffer Size: | 4 GB |
| Features: | TRIM support, Garbage Collection technology, sleep mode, V-NAND Technology, Samsung MJX Controller, Low Power DDR4 SDRAM Cache, S.M.A.R.T., 256-bit AES |
| Weight: | 62 g |
| SSD Endurance: | 1440 TB |
| Internal Data Rate: | 550 MBps (read) / 520 MBps (write) |
| 4KB Random Read: | 7500 IOPS |
| 4KB Random Write: | 42000 IOPS |
| Maximum 4KB Random Write: | 89000 IOPS |
| Maximum 4KB Random Read: | 97000 IOPS |
| MTBF: | 1,500,000 hours |
| Interfaces: | 1 x SATA 6 Gb/s |
| Compatible Bay: | 2.5" |
| Power Consumption: | 3.1 Watt (average) 5.4 Watt (maximum) 0.03 Watt (idle) |
| Compliant Standards: | IEEE 1667 |
| Service & Support: | Limited warranty - 3 years |
| Min Operating Temperature: | 0 °C |
| Max Operating Temperature: | 70 °C |
| Shock Tolerance (operating): | 1500 g @ 0.5 ms half-sine |
| Manufacturer: | SAMSUNG |
| Manufacturer Part No: | MZ-76Q4T0BW |
| Device Type: | Solid state drive - internal |
| Capacity: | 4 TB |
| Hardware Encryption: | Yes |
| Encryption Algorithm: | 256-bit AES |
| NAND Flash Memory Type: | Multi-level cell (MLC) |
| Form Factor: | 2.5" |
| Interface: | SATA 6Gb/s |
| Buffer Size: | 4 GB |
| Features: | TRIM support, Garbage Collection technology, sleep mode, V-NAND Technology, Samsung MJX Controller, Low Power DDR4 SDRAM Cache, S.M.A.R.T., 256-bit AES |
| Weight: | 62 g |
| SSD Endurance: | 1440 TB |
| Internal Data Rate: | 550 MBps (read) / 520 MBps (write) |
| 4KB Random Read: | 7500 IOPS |
| 4KB Random Write: | 42000 IOPS |
| Maximum 4KB Random Write: | 89000 IOPS |
| Maximum 4KB Random Read: | 97000 IOPS |
| MTBF: | 1,500,000 hours |
| Interfaces: | 1 x SATA 6 Gb/s |
| Compatible Bay: | 2.5" |
| Power Consumption: | 3.1 Watt (average) 5.4 Watt (maximum) 0.03 Watt (idle) |
| Compliant Standards: | IEEE 1667 |
| Service & Support: | Limited warranty - 3 years |
| Min Operating Temperature: | 0 °C |
| Max Operating Temperature: | 70 °C |
| Shock Tolerance (operating): | 1500 g @ 0.5 ms half-sine |
| Manufacturer: | SAMSUNG |
| Manufacturer Part No: | MZ-76Q4T0BW |
| Device Type: | Solid state drive - internal |
| Capacity: | 4 TB |
| Hardware Encryption: | Yes |
| Encryption Algorithm: | 256-bit AES |
| NAND Flash Memory Type: | Multi-level cell (MLC) |
| Form Factor: | 2.5" |
| Interface: | SATA 6Gb/s |
| Buffer Size: | 4 GB |
| Features: | TRIM support, Garbage Collection technology, sleep mode, V-NAND Technology, Samsung MJX Controller, Low Power DDR4 SDRAM Cache, S.M.A.R.T., 256-bit AES |
| Weight: | 62 g |
| SSD Endurance: | 1440 TB |
| Internal Data Rate: | 550 MBps (read) / 520 MBps (write) |
| 4KB Random Read: | 7500 IOPS |
| 4KB Random Write: | 42000 IOPS |
| Maximum 4KB Random Write: | 89000 IOPS |
| Maximum 4KB Random Read: | 97000 IOPS |
| MTBF: | 1,500,000 hours |
| Interfaces: | 1 x SATA 6 Gb/s |
| Compatible Bay: | 2.5" |
| Power Consumption: | 3.1 Watt (average) 5.4 Watt (maximum) 0.03 Watt (idle) |
| Compliant Standards: | IEEE 1667 |
| Service & Support: | Limited warranty - 3 years |
| Min Operating Temperature: | 0 °C |
| Max Operating Temperature: | 70 °C |
| Shock Tolerance (operating): | 1500 g @ 0.5 ms half-sine |
| Manufacturer: | SAMSUNG |
| Manufacturer Part No: | MZ-76Q4T0BW |
| Device Type: | Solid state drive - internal |
| Capacity: | 4 TB |
| Hardware Encryption: | Yes |
| Encryption Algorithm: | 256-bit AES |
| NAND Flash Memory Type: | Multi-level cell (MLC) |
| Form Factor: | 2.5" |
| Interface: | SATA 6Gb/s |
| Buffer Size: | 4 GB |
| Features: | TRIM support, Garbage Collection technology, sleep mode, V-NAND Technology, Samsung MJX Controller, Low Power DDR4 SDRAM Cache, S.M.A.R.T., 256-bit AES |
| Weight: | 62 g |
| SSD Endurance: | 1440 TB |
| Internal Data Rate: | 550 MBps (read) / 520 MBps (write) |
| 4KB Random Read: | 7500 IOPS |
| 4KB Random Write: | 42000 IOPS |
| Maximum 4KB Random Write: | 89000 IOPS |
| Maximum 4KB Random Read: | 97000 IOPS |
| MTBF: | 1,500,000 hours |
| Interfaces: | 1 x SATA 6 Gb/s |
| Compatible Bay: | 2.5" |
| Power Consumption: | 3.1 Watt (average) 5.4 Watt (maximum) 0.03 Watt (idle) |
| Compliant Standards: | IEEE 1667 |
| Service & Support: | Limited warranty - 3 years |
| Min Operating Temperature: | 0 °C |
| Max Operating Temperature: | 70 °C |
| Shock Tolerance (operating): | 1500 g @ 0.5 ms half-sine |
| Manufacturer: | SAMSUNG |
| Manufacturer Part No: | MZ-76Q4T0BW |
| Device Type: | Solid state drive - internal |
| Capacity: | 4 TB |
| Hardware Encryption: | Yes |
| Encryption Algorithm: | 256-bit AES |
| NAND Flash Memory Type: | Multi-level cell (MLC) |
| Form Factor: | 2.5" |
| Interface: | SATA 6Gb/s |
| Buffer Size: | 4 GB |
| Features: | TRIM support, Garbage Collection technology, sleep mode, V-NAND Technology, Samsung MJX Controller, Low Power DDR4 SDRAM Cache, S.M.A.R.T., 256-bit AES |
| Weight: | 62 g |
| SSD Endurance: | 1440 TB |
| Internal Data Rate: | 550 MBps (read) / 520 MBps (write) |
| 4KB Random Read: | 7500 IOPS |
| 4KB Random Write: | 42000 IOPS |
| Maximum 4KB Random Write: | 89000 IOPS |
| Maximum 4KB Random Read: | 97000 IOPS |
| MTBF: | 1,500,000 hours |
| Interfaces: | 1 x SATA 6 Gb/s |
| Compatible Bay: | 2.5" |
| Power Consumption: | 3.1 Watt (average) 5.4 Watt (maximum) 0.03 Watt (idle) |
| Compliant Standards: | IEEE 1667 |
| Service & Support: | Limited warranty - 3 years |
| Min Operating Temperature: | 0 °C |
| Max Operating Temperature: | 70 °C |
| Shock Tolerance (operating): | 1500 g @ 0.5 ms half-sine |
| Manufacturer: | SAMSUNG |
| Manufacturer Part No: | MZ-76Q4T0BW |
| Device Type: | Solid state drive - internal |
| Capacity: | 4 TB |
| Hardware Encryption: | Yes |
| Encryption Algorithm: | 256-bit AES |
| NAND Flash Memory Type: | Multi-level cell (MLC) |
| Form Factor: | 2.5" |
| Interface: | SATA 6Gb/s |
| Buffer Size: | 4 GB |
| Features: | TRIM support, Garbage Collection technology, sleep mode, V-NAND Technology, Samsung MJX Controller, Low Power DDR4 SDRAM Cache, S.M.A.R.T., 256-bit AES |
| Weight: | 62 g |
| SSD Endurance: | 1440 TB |
| Internal Data Rate: | 550 MBps (read) / 520 MBps (write) |
| 4KB Random Read: | 7500 IOPS |
| 4KB Random Write: | 42000 IOPS |
| Maximum 4KB Random Write: | 89000 IOPS |
| Maximum 4KB Random Read: | 97000 IOPS |
| MTBF: | 1,500,000 hours |
| Interfaces: | 1 x SATA 6 Gb/s |
| Compatible Bay: | 2.5" |
| Power Consumption: | 3.1 Watt (average) 5.4 Watt (maximum) 0.03 Watt (idle) |
| Compliant Standards: | IEEE 1667 |
| Service & Support: | Limited warranty - 3 years |
| Min Operating Temperature: | 0 °C |
| Max Operating Temperature: | 70 °C |
| Shock Tolerance (operating): | 1500 g @ 0.5 ms half-sine |
| Manufacturer: | SAMSUNG |
| Manufacturer Part No: | MZ-76Q4T0BW |
| Device Type: | Solid state drive - internal |
| Capacity: | 4 TB |
| Hardware Encryption: | Yes |
| Encryption Algorithm: | 256-bit AES |
| NAND Flash Memory Type: | Multi-level cell (MLC) |
| Form Factor: | 2.5" |
| Interface: | SATA 6Gb/s |
| Buffer Size: | 4 GB |
| Features: | TRIM support, Garbage Collection technology, sleep mode, V-NAND Technology, Samsung MJX Controller, Low Power DDR4 SDRAM Cache, S.M.A.R.T., 256-bit AES |
| Weight: | 62 g |
| SSD Endurance: | 1440 TB |
| Internal Data Rate: | 550 MBps (read) / 520 MBps (write) |
| 4KB Random Read: | 7500 IOPS |
| 4KB Random Write: | 42000 IOPS |
| Maximum 4KB Random Write: | 89000 IOPS |
| Maximum 4KB Random Read: | 97000 IOPS |
| MTBF: | 1,500,000 hours |
| Interfaces: | 1 x SATA 6 Gb/s |
| Compatible Bay: | 2.5" |
| Power Consumption: | 3.1 Watt (average) 5.4 Watt (maximum) 0.03 Watt (idle) |
| Compliant Standards: | IEEE 1667 |
| Service & Support: | Limited warranty - 3 years |
| Min Operating Temperature: | 0 °C |
| Max Operating Temperature: | 70 °C |
| Shock Tolerance (operating): | 1500 g @ 0.5 ms half-sine |
| Manufacturer: | SAMSUNG |
| Manufacturer Part No: | MZ-76Q4T0BW |
| Device Type: | Solid state drive - internal |
| Capacity: | 4 TB |
| Hardware Encryption: | Yes |
| Encryption Algorithm: | 256-bit AES |
| NAND Flash Memory Type: | Multi-level cell (MLC) |
| Form Factor: | 2.5" |
| Interface: | SATA 6Gb/s |
| Buffer Size: | 4 GB |
| Features: | TRIM support, Garbage Collection technology, sleep mode, V-NAND Technology, Samsung MJX Controller, Low Power DDR4 SDRAM Cache, S.M.A.R.T., 256-bit AES |
| Weight: | 62 g |
| SSD Endurance: | 1440 TB |
| Internal Data Rate: | 550 MBps (read) / 520 MBps (write) |
| 4KB Random Read: | 7500 IOPS |
| 4KB Random Write: | 42000 IOPS |
| Maximum 4KB Random Write: | 89000 IOPS |
| Maximum 4KB Random Read: | 97000 IOPS |
| MTBF: | 1,500,000 hours |
| Interfaces: | 1 x SATA 6 Gb/s |
| Compatible Bay: | 2.5" |
| Power Consumption: | 3.1 Watt (average) 5.4 Watt (maximum) 0.03 Watt (idle) |
| Compliant Standards: | IEEE 1667 |
| Service & Support: | Limited warranty - 3 years |
| Min Operating Temperature: | 0 °C |
| Max Operating Temperature: | 70 °C |
| Shock Tolerance (operating): | 1500 g @ 0.5 ms half-sine |
| Manufacturer: | SAMSUNG |
| Manufacturer Part No: | MZ-76Q4T0BW |
| Device Type: | Solid state drive - internal |
| Capacity: | 4 TB |
| Hardware Encryption: | Yes |
| Encryption Algorithm: | 256-bit AES |
| NAND Flash Memory Type: | Multi-level cell (MLC) |
| Form Factor: | 2.5" |
| Interface: | SATA 6Gb/s |
| Buffer Size: | 4 GB |
| Features: | TRIM support, Garbage Collection technology, sleep mode, V-NAND Technology, Samsung MJX Controller, Low Power DDR4 SDRAM Cache, S.M.A.R.T., 256-bit AES |
| Weight: | 62 g |
| SSD Endurance: | 1440 TB |
| Internal Data Rate: | 550 MBps (read) / 520 MBps (write) |
| 4KB Random Read: | 7500 IOPS |
| 4KB Random Write: | 42000 IOPS |
| Maximum 4KB Random Write: | 89000 IOPS |
| Maximum 4KB Random Read: | 97000 IOPS |
| MTBF: | 1,500,000 hours |
| Interfaces: | 1 x SATA 6 Gb/s |
| Compatible Bay: | 2.5" |
| Power Consumption: | 3.1 Watt (average) 5.4 Watt (maximum) 0.03 Watt (idle) |
| Compliant Standards: | IEEE 1667 |
| Service & Support: | Limited warranty - 3 years |
| Min Operating Temperature: | 0 °C |
| Max Operating Temperature: | 70 °C |
| Shock Tolerance (operating): | 1500 g @ 0.5 ms half-sine |
| Manufacturer: | SAMSUNG |
| Manufacturer Part No: | MZ-76Q4T0BW |
| Device Type: | Solid state drive - internal |
| Capacity: | 4 TB |
| Hardware Encryption: | Yes |
| Encryption Algorithm: | 256-bit AES |
| NAND Flash Memory Type: | Multi-level cell (MLC) |
| Form Factor: | 2.5" |
| Interface: | SATA 6Gb/s |
| Buffer Size: | 4 GB |
| Features: | TRIM support, Garbage Collection technology, sleep mode, V-NAND Technology, Samsung MJX Controller, Low Power DDR4 SDRAM Cache, S.M.A.R.T., 256-bit AES |
| Weight: | 62 g |
| SSD Endurance: | 1440 TB |
| Internal Data Rate: | 550 MBps (read) / 520 MBps (write) |
| 4KB Random Read: | 7500 IOPS |
| 4KB Random Write: | 42000 IOPS |
| Maximum 4KB Random Write: | 89000 IOPS |
| Maximum 4KB Random Read: | 97000 IOPS |
| MTBF: | 1,500,000 hours |
| Interfaces: | 1 x SATA 6 Gb/s |
| Compatible Bay: | 2.5" |
| Power Consumption: | 3.1 Watt (average) 5.4 Watt (maximum) 0.03 Watt (idle) |
| Compliant Standards: | IEEE 1667 |
| Service & Support: | Limited warranty - 3 years |
| Min Operating Temperature: | 0 °C |
| Max Operating Temperature: | 70 °C |
| Shock Tolerance (operating): | 1500 g @ 0.5 ms half-sine |
| Manufacturer: | SAMSUNG |
| Manufacturer Part No: | MZ-76Q4T0BW |
| Device Type: | Solid state drive - internal |
| Capacity: | 4 TB |
| Hardware Encryption: | Yes |
| Encryption Algorithm: | 256-bit AES |
| NAND Flash Memory Type: | Multi-level cell (MLC) |
| Form Factor: | 2.5" |
| Interface: | SATA 6Gb/s |
| Buffer Size: | 4 GB |
| Features: | TRIM support, Garbage Collection technology, sleep mode, V-NAND Technology, Samsung MJX Controller, Low Power DDR4 SDRAM Cache, S.M.A.R.T., 256-bit AES |
| Weight: | 62 g |
| SSD Endurance: | 1440 TB |
| Internal Data Rate: | 550 MBps (read) / 520 MBps (write) |
| 4KB Random Read: | 7500 IOPS |
| 4KB Random Write: | 42000 IOPS |
| Maximum 4KB Random Write: | 89000 IOPS |
| Maximum 4KB Random Read: | 97000 IOPS |
| MTBF: | 1,500,000 hours |
| Interfaces: | 1 x SATA 6 Gb/s |
| Compatible Bay: | 2.5" |
| Power Consumption: | 3.1 Watt (average) 5.4 Watt (maximum) 0.03 Watt (idle) |
| Compliant Standards: | IEEE 1667 |
| Service & Support: | Limited warranty - 3 years |
| Min Operating Temperature: | 0 °C |
| Max Operating Temperature: | 70 °C |
| Shock Tolerance (operating): | 1500 g @ 0.5 ms half-sine |
| Manufacturer: | SAMSUNG |
| Manufacturer Part No: | MZ-76Q4T0BW |
| Device Type: | Solid state drive - internal |
| Capacity: | 4 TB |
| Hardware Encryption: | Yes |
| Encryption Algorithm: | 256-bit AES |
| NAND Flash Memory Type: | Multi-level cell (MLC) |
| Form Factor: | 2.5" |
| Interface: | SATA 6Gb/s |
| Buffer Size: | 4 GB |
| Features: | TRIM support, Garbage Collection technology, sleep mode, V-NAND Technology, Samsung MJX Controller, Low Power DDR4 SDRAM Cache, S.M.A.R.T., 256-bit AES |
| Weight: | 62 g |
| SSD Endurance: | 1440 TB |
| Internal Data Rate: | 550 MBps (read) / 520 MBps (write) |
| 4KB Random Read: | 7500 IOPS |
| 4KB Random Write: | 42000 IOPS |
| Maximum 4KB Random Write: | 89000 IOPS |
| Maximum 4KB Random Read: | 97000 IOPS |
| MTBF: | 1,500,000 hours |
| Interfaces: | 1 x SATA 6 Gb/s |
| Compatible Bay: | 2.5" |
| Power Consumption: | 3.1 Watt (average) 5.4 Watt (maximum) 0.03 Watt (idle) |
| Compliant Standards: | IEEE 1667 |
| Service & Support: | Limited warranty - 3 years |
| Min Operating Temperature: | 0 °C |
| Max Operating Temperature: | 70 °C |
| Shock Tolerance (operating): | 1500 g @ 0.5 ms half-sine |
| Manufacturer: | SAMSUNG |
| Manufacturer Part No: | MZ-76Q4T0BW |
| Device Type: | Solid state drive - internal |
| Capacity: | 4 TB |
| Hardware Encryption: | Yes |
| Encryption Algorithm: | 256-bit AES |
| NAND Flash Memory Type: | Multi-level cell (MLC) |
| Form Factor: | 2.5" |
| Interface: | SATA 6Gb/s |
| Buffer Size: | 4 GB |
| Features: | TRIM support, Garbage Collection technology, sleep mode, V-NAND Technology, Samsung MJX Controller, Low Power DDR4 SDRAM Cache, S.M.A.R.T., 256-bit AES |
| Weight: | 62 g |
| SSD Endurance: | 1440 TB |
| Internal Data Rate: | 550 MBps (read) / 520 MBps (write) |
| 4KB Random Read: | 7500 IOPS |
| 4KB Random Write: | 42000 IOPS |
| Maximum 4KB Random Write: | 89000 IOPS |
| Maximum 4KB Random Read: | 97000 IOPS |
| MTBF: | 1,500,000 hours |
| Interfaces: | 1 x SATA 6 Gb/s |
| Compatible Bay: | 2.5" |
| Power Consumption: | 3.1 Watt (average) 5.4 Watt (maximum) 0.03 Watt (idle) |
| Compliant Standards: | IEEE 1667 |
| Service & Support: | Limited warranty - 3 years |
| Min Operating Temperature: | 0 °C |
| Max Operating Temperature: | 70 °C |
| Shock Tolerance (operating): | 1500 g @ 0.5 ms half-sine |
| Гаранция: | 36 месеца |
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