SCU:MZ-76Q1T0BW
Скорост на четене, MB/s: Up to 550 MB/s
Скорост на запис, MB/s: Up to 520 MB/s
Интерфейс: SATA 6 Gb/s Interface, compatible with SATA 3 Gb/s & SATA 1.5 Gb/s interface
Външен/ вътрешен: Internal
Капацитет: 1 000 GB
Предназначен за: Лаптопи
  • Изчерпан
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Цена за доставка: 4.99 лв с ДДС
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Изчерпан

Скорост на четене, MB/s: Up to 550 MB/s
Скорост на запис, MB/s: Up to 520 MB/s
Интерфейс: SATA 6 Gb/s Interface, compatible with SATA 3 Gb/s & SATA 1.5 Gb/s interface
Външен/ вътрешен: Internal
Капацитет: 1 000 GB
Предназначен за: Лаптопи
Номер на модела: SSD Samsung 860 PRO Series, 512 GB 3D V-NAND Flash, 2.5" Slim, SATA 6Gb/s
Партиден номер: MZ-76Q1T0BW
Sequential Write: 520 MB/s
Sequential Read: 550 MB/s
Interface: SATA 6Gb/s
Capacity: 1ТB
Type: Internal
Form Factor: 2.5 " (7 mm)
Manufacturer: SAMSUNG
Manufacturer Part No: MZ-76Q1T0BW
Device Type: Solid state drive - internal
Capacity: 1 TB
Hardware Encryption: Yes
NAND Flash Memory Type: Multi-level cell (MLC)
Form Factor: 2.5"
Interface: SATA 6Gb/s
Buffer Size: 1 GB
Features: V-NAND Technology
Weight: 51 g
SSD Endurance: 360 TB
Internal Data Rate: 550 MBps (read) / 520 MBps (write)
4KB Random Read: 7500 IOPS
4KB Random Write: 42000 IOPS
Maximum 4KB Random Write: 89000 IOPS
Maximum 4KB Random Read: 96000 IOPS
MTBF: 1,500,000 hours
Interfaces: 1 x SATA 6 Gb/s
Compatible Bay: 2.5"
Service & Support: Limited warranty - 3 years
Min Operating Temperature: 0 °C
Max Operating Temperature: 70 °C
Shock Tolerance (operating): 1500 g @ 0.5 ms half-sine
Manufacturer: SAMSUNG
Manufacturer Part No: MZ-76Q1T0BW
Device Type: Solid state drive - internal
Capacity: 1 TB
Hardware Encryption: Yes
NAND Flash Memory Type: Multi-level cell (MLC)
Form Factor: 2.5"
Interface: SATA 6Gb/s
Buffer Size: 1 GB
Features: V-NAND Technology
Weight: 51 g
SSD Endurance: 360 TB
Internal Data Rate: 550 MBps (read) / 520 MBps (write)
4KB Random Read: 7500 IOPS
4KB Random Write: 42000 IOPS
Maximum 4KB Random Write: 89000 IOPS
Maximum 4KB Random Read: 96000 IOPS
MTBF: 1,500,000 hours
Interfaces: 1 x SATA 6 Gb/s
Compatible Bay: 2.5"
Service & Support: Limited warranty - 3 years
Min Operating Temperature: 0 °C
Max Operating Temperature: 70 °C
Shock Tolerance (operating): 1500 g @ 0.5 ms half-sine
Manufacturer: SAMSUNG
Manufacturer Part No: MZ-76Q1T0BW
Device Type: Solid state drive - internal
Capacity: 1 TB
Hardware Encryption: Yes
NAND Flash Memory Type: Multi-level cell (MLC)
Form Factor: 2.5"
Interface: SATA 6Gb/s
Buffer Size: 1 GB
Features: V-NAND Technology
Weight: 51 g
SSD Endurance: 360 TB
Internal Data Rate: 550 MBps (read) / 520 MBps (write)
4KB Random Read: 7500 IOPS
4KB Random Write: 42000 IOPS
Maximum 4KB Random Write: 89000 IOPS
Maximum 4KB Random Read: 96000 IOPS
MTBF: 1,500,000 hours
Interfaces: 1 x SATA 6 Gb/s
Compatible Bay: 2.5"
Service & Support: Limited warranty - 3 years
Min Operating Temperature: 0 °C
Max Operating Temperature: 70 °C
Shock Tolerance (operating): 1500 g @ 0.5 ms half-sine
Manufacturer: SAMSUNG
Manufacturer Part No: MZ-76Q1T0BW
Device Type: Solid state drive - internal
Capacity: 1 TB
Hardware Encryption: Yes
NAND Flash Memory Type: Multi-level cell (MLC)
Form Factor: 2.5"
Interface: SATA 6Gb/s
Buffer Size: 1 GB
Features: V-NAND Technology
Weight: 51 g
SSD Endurance: 360 TB
Internal Data Rate: 550 MBps (read) / 520 MBps (write)
4KB Random Read: 7500 IOPS
4KB Random Write: 42000 IOPS
Maximum 4KB Random Write: 89000 IOPS
Maximum 4KB Random Read: 96000 IOPS
MTBF: 1,500,000 hours
Interfaces: 1 x SATA 6 Gb/s
Compatible Bay: 2.5"
Service & Support: Limited warranty - 3 years
Min Operating Temperature: 0 °C
Max Operating Temperature: 70 °C
Shock Tolerance (operating): 1500 g @ 0.5 ms half-sine
Manufacturer: SAMSUNG
Manufacturer Part No: MZ-76Q1T0BW
Device Type: Solid state drive - internal
Capacity: 1 TB
Hardware Encryption: Yes
NAND Flash Memory Type: Multi-level cell (MLC)
Form Factor: 2.5"
Interface: SATA 6Gb/s
Buffer Size: 1 GB
Features: V-NAND Technology
Weight: 51 g
SSD Endurance: 360 TB
Internal Data Rate: 550 MBps (read) / 520 MBps (write)
4KB Random Read: 7500 IOPS
4KB Random Write: 42000 IOPS
Maximum 4KB Random Write: 89000 IOPS
Maximum 4KB Random Read: 96000 IOPS
MTBF: 1,500,000 hours
Interfaces: 1 x SATA 6 Gb/s
Compatible Bay: 2.5"
Service & Support: Limited warranty - 3 years
Min Operating Temperature: 0 °C
Max Operating Temperature: 70 °C
Shock Tolerance (operating): 1500 g @ 0.5 ms half-sine
Manufacturer: SAMSUNG
Manufacturer Part No: MZ-76Q1T0BW
Device Type: Solid state drive - internal
Capacity: 1 TB
Hardware Encryption: Yes
NAND Flash Memory Type: Multi-level cell (MLC)
Form Factor: 2.5"
Interface: SATA 6Gb/s
Buffer Size: 1 GB
Features: V-NAND Technology
Weight: 51 g
SSD Endurance: 360 TB
Internal Data Rate: 550 MBps (read) / 520 MBps (write)
4KB Random Read: 7500 IOPS
4KB Random Write: 42000 IOPS
Maximum 4KB Random Write: 89000 IOPS
Maximum 4KB Random Read: 96000 IOPS
MTBF: 1,500,000 hours
Interfaces: 1 x SATA 6 Gb/s
Compatible Bay: 2.5"
Service & Support: Limited warranty - 3 years
Min Operating Temperature: 0 °C
Max Operating Temperature: 70 °C
Shock Tolerance (operating): 1500 g @ 0.5 ms half-sine
Manufacturer: SAMSUNG
Manufacturer Part No: MZ-76Q1T0BW
Device Type: Solid state drive - internal
Capacity: 1 TB
Hardware Encryption: Yes
NAND Flash Memory Type: Multi-level cell (MLC)
Form Factor: 2.5"
Interface: SATA 6Gb/s
Buffer Size: 1 GB
Features: V-NAND Technology
Weight: 51 g
SSD Endurance: 360 TB
Internal Data Rate: 550 MBps (read) / 520 MBps (write)
4KB Random Read: 7500 IOPS
4KB Random Write: 42000 IOPS
Maximum 4KB Random Write: 89000 IOPS
Maximum 4KB Random Read: 96000 IOPS
MTBF: 1,500,000 hours
Interfaces: 1 x SATA 6 Gb/s
Compatible Bay: 2.5"
Service & Support: Limited warranty - 3 years
Min Operating Temperature: 0 °C
Max Operating Temperature: 70 °C
Shock Tolerance (operating): 1500 g @ 0.5 ms half-sine
Manufacturer: SAMSUNG
Manufacturer Part No: MZ-76Q1T0BW
Device Type: Solid state drive - internal
Capacity: 1 TB
Hardware Encryption: Yes
NAND Flash Memory Type: Multi-level cell (MLC)
Form Factor: 2.5"
Interface: SATA 6Gb/s
Buffer Size: 1 GB
Features: V-NAND Technology
Weight: 51 g
SSD Endurance: 360 TB
Internal Data Rate: 550 MBps (read) / 520 MBps (write)
4KB Random Read: 7500 IOPS
4KB Random Write: 42000 IOPS
Maximum 4KB Random Write: 89000 IOPS
Maximum 4KB Random Read: 96000 IOPS
MTBF: 1,500,000 hours
Interfaces: 1 x SATA 6 Gb/s
Compatible Bay: 2.5"
Service & Support: Limited warranty - 3 years
Min Operating Temperature: 0 °C
Max Operating Temperature: 70 °C
Shock Tolerance (operating): 1500 g @ 0.5 ms half-sine
Manufacturer: SAMSUNG
Manufacturer Part No: MZ-76Q1T0BW
Device Type: Solid state drive - internal
Capacity: 1 TB
Hardware Encryption: Yes
NAND Flash Memory Type: Multi-level cell (MLC)
Form Factor: 2.5"
Interface: SATA 6Gb/s
Buffer Size: 1 GB
Features: V-NAND Technology
Weight: 51 g
SSD Endurance: 360 TB
Internal Data Rate: 550 MBps (read) / 520 MBps (write)
4KB Random Read: 7500 IOPS
4KB Random Write: 42000 IOPS
Maximum 4KB Random Write: 89000 IOPS
Maximum 4KB Random Read: 96000 IOPS
MTBF: 1,500,000 hours
Interfaces: 1 x SATA 6 Gb/s
Compatible Bay: 2.5"
Service & Support: Limited warranty - 3 years
Min Operating Temperature: 0 °C
Max Operating Temperature: 70 °C
Shock Tolerance (operating): 1500 g @ 0.5 ms half-sine
Manufacturer: SAMSUNG
Manufacturer Part No: MZ-76Q1T0BW
Device Type: Solid state drive - internal
Capacity: 1 TB
Hardware Encryption: Yes
NAND Flash Memory Type: Multi-level cell (MLC)
Form Factor: 2.5"
Interface: SATA 6Gb/s
Buffer Size: 1 GB
Features: V-NAND Technology
Weight: 51 g
SSD Endurance: 360 TB
Internal Data Rate: 550 MBps (read) / 520 MBps (write)
4KB Random Read: 7500 IOPS
4KB Random Write: 42000 IOPS
Maximum 4KB Random Write: 89000 IOPS
Maximum 4KB Random Read: 96000 IOPS
MTBF: 1,500,000 hours
Interfaces: 1 x SATA 6 Gb/s
Compatible Bay: 2.5"
Service & Support: Limited warranty - 3 years
Min Operating Temperature: 0 °C
Max Operating Temperature: 70 °C
Shock Tolerance (operating): 1500 g @ 0.5 ms half-sine
Manufacturer: SAMSUNG
Manufacturer Part No: MZ-76Q1T0BW
Device Type: Solid state drive - internal
Capacity: 1 TB
Hardware Encryption: Yes
NAND Flash Memory Type: Multi-level cell (MLC)
Form Factor: 2.5"
Interface: SATA 6Gb/s
Buffer Size: 1 GB
Features: V-NAND Technology
Weight: 51 g
SSD Endurance: 360 TB
Internal Data Rate: 550 MBps (read) / 520 MBps (write)
4KB Random Read: 7500 IOPS
4KB Random Write: 42000 IOPS
Maximum 4KB Random Write: 89000 IOPS
Maximum 4KB Random Read: 96000 IOPS
MTBF: 1,500,000 hours
Interfaces: 1 x SATA 6 Gb/s
Compatible Bay: 2.5"
Service & Support: Limited warranty - 3 years
Min Operating Temperature: 0 °C
Max Operating Temperature: 70 °C
Shock Tolerance (operating): 1500 g @ 0.5 ms half-sine
Manufacturer: SAMSUNG
Manufacturer Part No: MZ-76Q1T0BW
Device Type: Solid state drive - internal
Capacity: 1 TB
Hardware Encryption: Yes
NAND Flash Memory Type: Multi-level cell (MLC)
Form Factor: 2.5"
Interface: SATA 6Gb/s
Buffer Size: 1 GB
Features: V-NAND Technology
Weight: 51 g
SSD Endurance: 360 TB
Internal Data Rate: 550 MBps (read) / 520 MBps (write)
4KB Random Read: 7500 IOPS
4KB Random Write: 42000 IOPS
Maximum 4KB Random Write: 89000 IOPS
Maximum 4KB Random Read: 96000 IOPS
MTBF: 1,500,000 hours
Interfaces: 1 x SATA 6 Gb/s
Compatible Bay: 2.5"
Service & Support: Limited warranty - 3 years
Min Operating Temperature: 0 °C
Max Operating Temperature: 70 °C
Shock Tolerance (operating): 1500 g @ 0.5 ms half-sine
Manufacturer: SAMSUNG
Manufacturer Part No: MZ-76Q1T0BW
Device Type: Solid state drive - internal
Capacity: 1 TB
Hardware Encryption: Yes
NAND Flash Memory Type: Multi-level cell (MLC)
Form Factor: 2.5"
Interface: SATA 6Gb/s
Buffer Size: 1 GB
Features: V-NAND Technology
Weight: 51 g
SSD Endurance: 360 TB
Internal Data Rate: 550 MBps (read) / 520 MBps (write)
4KB Random Read: 7500 IOPS
4KB Random Write: 42000 IOPS
Maximum 4KB Random Write: 89000 IOPS
Maximum 4KB Random Read: 96000 IOPS
MTBF: 1,500,000 hours
Interfaces: 1 x SATA 6 Gb/s
Compatible Bay: 2.5"
Service & Support: Limited warranty - 3 years
Min Operating Temperature: 0 °C
Max Operating Temperature: 70 °C
Shock Tolerance (operating): 1500 g @ 0.5 ms half-sine
Manufacturer: SAMSUNG
Manufacturer Part No: MZ-76Q1T0BW
Device Type: Solid state drive - internal
Capacity: 1 TB
Hardware Encryption: Yes
NAND Flash Memory Type: Multi-level cell (MLC)
Form Factor: 2.5"
Interface: SATA 6Gb/s
Buffer Size: 1 GB
Features: V-NAND Technology
Weight: 51 g
SSD Endurance: 360 TB
Internal Data Rate: 550 MBps (read) / 520 MBps (write)
4KB Random Read: 7500 IOPS
4KB Random Write: 42000 IOPS
Maximum 4KB Random Write: 89000 IOPS
Maximum 4KB Random Read: 96000 IOPS
MTBF: 1,500,000 hours
Interfaces: 1 x SATA 6 Gb/s
Compatible Bay: 2.5"
Service & Support: Limited warranty - 3 years
Min Operating Temperature: 0 °C
Max Operating Temperature: 70 °C
Shock Tolerance (operating): 1500 g @ 0.5 ms half-sine
Manufacturer: SAMSUNG
Manufacturer Part No: MZ-76Q1T0BW
Device Type: Solid state drive - internal
Capacity: 1 TB
Hardware Encryption: Yes
NAND Flash Memory Type: Multi-level cell (MLC)
Form Factor: 2.5"
Interface: SATA 6Gb/s
Buffer Size: 1 GB
Features: V-NAND Technology
Weight: 51 g
SSD Endurance: 360 TB
Internal Data Rate: 550 MBps (read) / 520 MBps (write)
4KB Random Read: 7500 IOPS
4KB Random Write: 42000 IOPS
Maximum 4KB Random Write: 89000 IOPS
Maximum 4KB Random Read: 96000 IOPS
MTBF: 1,500,000 hours
Interfaces: 1 x SATA 6 Gb/s
Compatible Bay: 2.5"
Service & Support: Limited warranty - 3 years
Min Operating Temperature: 0 °C
Max Operating Temperature: 70 °C
Shock Tolerance (operating): 1500 g @ 0.5 ms half-sine
Manufacturer: SAMSUNG
Manufacturer Part No: MZ-76Q1T0BW
Device Type: Solid state drive - internal
Capacity: 1 TB
Hardware Encryption: Yes
NAND Flash Memory Type: Multi-level cell (MLC)
Form Factor: 2.5"
Interface: SATA 6Gb/s
Buffer Size: 1 GB
Features: V-NAND Technology
Weight: 51 g
SSD Endurance: 360 TB
Internal Data Rate: 550 MBps (read) / 520 MBps (write)
4KB Random Read: 7500 IOPS
4KB Random Write: 42000 IOPS
Maximum 4KB Random Write: 89000 IOPS
Maximum 4KB Random Read: 96000 IOPS
MTBF: 1,500,000 hours
Interfaces: 1 x SATA 6 Gb/s
Compatible Bay: 2.5"
Service & Support: Limited warranty - 3 years
Min Operating Temperature: 0 °C
Max Operating Temperature: 70 °C
Shock Tolerance (operating): 1500 g @ 0.5 ms half-sine
Manufacturer: SAMSUNG
Manufacturer Part No: MZ-76Q1T0BW
Device Type: Solid state drive - internal
Capacity: 1 TB
Hardware Encryption: Yes
NAND Flash Memory Type: Multi-level cell (MLC)
Form Factor: 2.5"
Interface: SATA 6Gb/s
Buffer Size: 1 GB
Features: V-NAND Technology
Weight: 51 g
SSD Endurance: 360 TB
Internal Data Rate: 550 MBps (read) / 520 MBps (write)
4KB Random Read: 7500 IOPS
4KB Random Write: 42000 IOPS
Maximum 4KB Random Write: 89000 IOPS
Maximum 4KB Random Read: 96000 IOPS
MTBF: 1,500,000 hours
Interfaces: 1 x SATA 6 Gb/s
Compatible Bay: 2.5"
Service & Support: Limited warranty - 3 years
Min Operating Temperature: 0 °C
Max Operating Temperature: 70 °C
Shock Tolerance (operating): 1500 g @ 0.5 ms half-sine
Гаранция: 36 месеца

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